Manufacturer Part Number
STD4NK80ZT4
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel MOSFET transistor suitable for a wide range of power electronics applications.
Product Features and Performance
800V drain-source voltage rating
5Ω maximum on-resistance at 1.5A, 10V
3A continuous drain current at 25°C
80W maximum power dissipation
Wide operating temperature range of -55°C to 150°C
Fast switching and low gate charge
Product Advantages
High voltage and power handling capabilities
Low on-resistance for efficient power conversion
Reliable performance across wide temperature range
Suitable for high-frequency and high-efficiency applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 800V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 3.5Ω @ 1.5A, 10V
Continuous Drain Current (Id): 3A @ 25°C
Power Dissipation (Ptot): 80W @ Tc
Input Capacitance (Ciss): 575pF @ 25V
Quality and Safety Features
RoHS3 compliant
DPAK surface mount package
Compatibility
Suitable for a wide range of power electronics applications, such as:
Switched-mode power supplies
Motor drives
Inverters
Industrial and home appliances
Application Areas
High-voltage, high-power switching
Power conversion and control
Industrial, automotive, and consumer electronics
Product Lifecycle
This product is an active, currently available part from STMicroelectronics. Replacement or upgrade options may be available depending on application requirements.
Key Reasons to Choose This Product
Excellent power handling and efficiency with low on-resistance
Wide operating temperature range for reliable performance
Compact and easy-to-use DPAK surface mount package
Suitable for high-frequency, high-voltage, and high-current applications
RoHS3 compliant for environmental responsibility