Manufacturer Part Number
STD4NK80Z-1
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
Transistor FET, MOSFET Single
Product Features and Performance
800V Drain to Source Voltage
5Ω Rds(on) @ 1.5A, 10V
3A Continuous Drain Current @ 25°C
575pF Input Capacitance @ 25V
80W Power Dissipation
N-Channel MOSFET
5V Gate Threshold Voltage @ 50A
10V Drive Voltage
5nC Gate Charge @ 10V
Product Advantages
High voltage capability
Low on-resistance
High power handling
Suitable for switching applications
Key Technical Parameters
Drain to Source Voltage: 800V
Gate to Source Voltage: ±30V
On-Resistance: 3.5Ω
Drain Current: 3A
Input Capacitance: 575pF
Power Dissipation: 80W
Gate Threshold Voltage: 4.5V
Gate Charge: 22.5nC
Quality and Safety Features
RoHS3 Compliant
Operating Temperature: -55°C to 150°C
Compatibility
TO-251 (IPAK) package
Application Areas
Switching power supplies
Motor drives
Industrial electronics
Automotive electronics
Product Lifecycle
Current production, no discontinuation planned
Replacements and upgrades available
Key Reasons to Choose This Product
High voltage and power handling capability
Low on-resistance for efficient switching
Suitable for a wide range of power electronics applications
Proven reliability and quality from STMicroelectronics
Availability of replacements and upgrades