STB46N30M5 - STMicroelectronics

Manufacturer Part Number

STB46N30M5

Manufacturer

STMicroelectronics

Introduction

High-performance N-channel power MOSFET in DPAK (TO-263) package

Product Features and Performance

AEC-Q101 qualified for automotive applications

Designed for high-voltage, high-current switching applications

Very low on-resistance down to 40 mΩ

High current capability up to 53 A at 25°C

Low gate charge for fast switching

Robust and reliable design

Product Advantages

Excellent thermal management due to DPAK package

Optimized for high-efficiency power conversion

Improved system reliability and performance

Key Technical Parameters

Drain to Source Voltage (Vdss): 300 V

Gate-Source Voltage (Vgs) (Max): ±25 V

On-Resistance (Rds(on)) (Max): 40 mΩ @ 26.5 A, 10 V

Continuous Drain Current (Id) (Max): 53 A at 25°C

Input Capacitance (Ciss) (Max): 4,240 pF @ 100 V

Power Dissipation (Max): 250 W at Tc

Quality and Safety Features

RoHS3 compliant

AEC-Q101 qualified for automotive applications

Robust and reliable design

Compatibility

Suitable for a wide range of high-voltage, high-current switching applications

Commonly used in power supplies, motor drives, and other industrial and automotive electronics

Application Areas

Power supplies

Motor drives

Industrial and automotive electronics

Product Lifecycle

This product is currently in active production and not nearing discontinuation.

Replacement or upgrade options may be available from STMicroelectronics.

Key Reasons to Choose This Product

Excellent thermal management and high-current capability in a compact DPAK package

Optimized for high-efficiency power conversion with low on-resistance and gate charge

Robust and reliable design with AEC-Q101 automotive qualification

Suitable for a wide range of high-voltage, high-current switching applications