STB47N50DM6AG - STMicroelectronics

Manufacturer Part Number

STB47N50DM6AG

Manufacturer

STMicroelectronics

Introduction

High-voltage N-channel power MOSFET in DPAK (TO-263) package

Designed for automotive and industrial applications

Product Features and Performance

Drain-to-source voltage (Vdss) of 500V

Continuous drain current (Id) of 38A at 25°C case temperature

On-state resistance (Rds(on)) of 71mΩ at 19A, 10V

Input capacitance (Ciss) of 2300pF at 100V

Power dissipation (Ptot) of 250W at 25°C case temperature

Wide operating temperature range of -55°C to 150°C

Product Advantages

Automotive-qualified AEC-Q101 standard

Low on-state resistance for low conduction losses

High voltage handling capability

Compact DPAK (TO-263) surface mount package

Key Technical Parameters

Drain-to-source voltage (Vdss): 500V

Gate-to-source voltage (Vgs): ±25V

On-state resistance (Rds(on)): 71mΩ @ 19A, 10V

Continuous drain current (Id): 38A @ 25°C

Quality and Safety Features

Compliant with RoHS3 directive

Automotive-qualified AEC-Q101 standard

Compatibility

Suitable for use in automotive and industrial applications

Application Areas

Automotive electronics (e.g., engine control, transmission control, power steering)

Industrial power conversion (e.g., motor drives, power supplies, inverters)

Product Lifecycle

Currently in production

Replacement or upgrade options available from STMicroelectronics

Key Reasons to Choose This Product

High voltage handling capability up to 500V

Low on-state resistance for efficient power switching

Automotive-qualified AEC-Q101 standard for reliability

Compact DPAK (TO-263) surface mount package for space-constrained designs

Wide operating temperature range of -55°C to 150°C