Manufacturer Part Number
STB47N50DM6AG
Manufacturer
STMicroelectronics
Introduction
High-voltage N-channel power MOSFET in DPAK (TO-263) package
Designed for automotive and industrial applications
Product Features and Performance
Drain-to-source voltage (Vdss) of 500V
Continuous drain current (Id) of 38A at 25°C case temperature
On-state resistance (Rds(on)) of 71mΩ at 19A, 10V
Input capacitance (Ciss) of 2300pF at 100V
Power dissipation (Ptot) of 250W at 25°C case temperature
Wide operating temperature range of -55°C to 150°C
Product Advantages
Automotive-qualified AEC-Q101 standard
Low on-state resistance for low conduction losses
High voltage handling capability
Compact DPAK (TO-263) surface mount package
Key Technical Parameters
Drain-to-source voltage (Vdss): 500V
Gate-to-source voltage (Vgs): ±25V
On-state resistance (Rds(on)): 71mΩ @ 19A, 10V
Continuous drain current (Id): 38A @ 25°C
Quality and Safety Features
Compliant with RoHS3 directive
Automotive-qualified AEC-Q101 standard
Compatibility
Suitable for use in automotive and industrial applications
Application Areas
Automotive electronics (e.g., engine control, transmission control, power steering)
Industrial power conversion (e.g., motor drives, power supplies, inverters)
Product Lifecycle
Currently in production
Replacement or upgrade options available from STMicroelectronics
Key Reasons to Choose This Product
High voltage handling capability up to 500V
Low on-state resistance for efficient power switching
Automotive-qualified AEC-Q101 standard for reliability
Compact DPAK (TO-263) surface mount package for space-constrained designs
Wide operating temperature range of -55°C to 150°C
STB4NK60ZT4 MOSSTMicroelectronics