Manufacturer Part Number
STB4NK60Z-1
Manufacturer
STMicroelectronics
Introduction
N-Channel 600V MOSFET in TO-262 package
Product Features and Performance
600V drain-source voltage
4A continuous drain current at 25°C
2Ω maximum on-resistance at 2A, 10V
510pF maximum input capacitance at 25V
70W maximum power dissipation at Tc
26nC maximum gate charge at 10V
Product Advantages
Optimized for high-voltage, high-power switching applications
Excellent switching performance with low conduction losses
Robust design for reliable operation
Key Technical Parameters
N-Channel MOSFET
600V drain-source voltage
30V maximum gate-source voltage
150°C maximum junction temperature
Quality and Safety Features
RoHS3 compliant
Hermetically sealed I2PAK package for rugged performance
Compatibility
Suitable for a wide range of high-voltage, high-power switching applications
Application Areas
Power supplies
Motor drives
Inverters
Industrial controls
Product Lifecycle
This product is currently available and is not nearing discontinuation. Replacement or upgrade options may be available.
Key Reasons to Choose This Product
Excellent high-voltage, high-power switching performance
Robust and reliable design for demanding applications
Optimized for efficiency and energy savings
Compatible with a wide range of high-power systems
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