Manufacturer Part Number
STB45N30M5
Manufacturer
STMicroelectronics
Introduction
High-performance N-Channel MOSFET transistor
Product Features and Performance
Optimized for high-efficiency power conversion applications
Low on-resistance and fast switching capabilities
Suitable for high-voltage and high-power applications
Product Advantages
Low conduction and switching losses
High power density
Improved energy efficiency
Key Technical Parameters
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±25 V
Rds On (Max) @ Id, Vgs: 40 mOhm @ 26.5 A, 10 V
Current Continuous Drain (Id) @ 25°C: 53 A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 100 V
Power Dissipation (Max): 250 W (Tc)
Vgs(th) (Max) @ Id: 5 V @ 250 A
Drive Voltage (Max Rds On, Min Rds On): 10 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Quality and Safety Features
RoHS3 compliant
Withstands high temperatures up to 150°C
Compatibility
Suitable for surface mount applications
Compatible with a variety of power conversion systems
Application Areas
High-efficiency power supplies
Motor drives
Inverters
Switching mode power supplies (SMPS)
Electric vehicles
Renewable energy systems
Product Lifecycle
Currently in production
Replacements and upgrades available
Key Reasons to Choose This Product
Excellent efficiency and low power losses
High power density and compact size
Reliable performance in high-temperature environments
Compatibility with a wide range of power conversion applications
Supports energy-efficient and environmentally friendly designs