STB42N60M2-EP - STMicroelectronics

Manufacturer Part Number

STB42N60M2-EP

Manufacturer

STMicroelectronics

Introduction

High-performance N-channel power MOSFET

Product Features and Performance

600V drain-to-source voltage

87mΩ on-resistance at 17A, 10V

34A continuous drain current at 25°C

Very low gate charge of 55nC at 10V

Fast switching capability

Optimized for high-frequency and high-efficiency applications

Product Advantages

Excellent trade-off between on-resistance and gate charge

Robust avalanche capability

Suitable for high-voltage, high-current switching applications

Key Technical Parameters

Drain-to-source voltage (Vdss): 600V

Gate-to-source voltage (Vgs): ±25V

On-resistance (Rds(on)): 87mΩ @ 17A, 10V

Continuous drain current (Id): 34A at 25°C

Input capacitance (Ciss): 2370pF @ 100V

Power dissipation (Ptot): 250W at Tc

Quality and Safety Features

RoHS3 compliant

DPAK (TO-263) package

Suitable for high-temperature operation up to 150°C

Compatibility

Designed for high-voltage, high-frequency switching applications

Application Areas

Switch-mode power supplies

Motor drives

Lighting ballasts

Industrial and consumer electronics

Product Lifecycle

Currently in production

Replacement or upgraded models may become available in the future

Several Key Reasons to Choose This Product

Excellent performance-to-cost ratio

Robust design with high avalanche capability

Suitable for high-voltage, high-current switching applications

Fast switching capability for high-efficiency power conversion

RoHS3 compliance for environmentally friendly applications