Manufacturer Part Number
STB45N40DM2AG
Manufacturer
STMicroelectronics
Introduction
High-voltage, high-performance N-channel power MOSFET in a DPAK (TO-263) package
Product Features and Performance
Automotive-grade, AEC-Q101 qualified device
MDmesh DM2 technology for high efficiency and low switching losses
400V drain-source voltage rating
38A continuous drain current at 25°C
Low on-resistance of 72mΩ at 19A, 10V
Wide temperature range of -55°C to 150°C
Product Advantages
Optimized for high-voltage, high-power automotive applications
Excellent thermal performance and power dissipation
High reliability and ruggedness
Key Technical Parameters
Drain-Source Voltage (Vdss): 400V
Gate-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 72mΩ @ 19A, 10V
Continuous Drain Current (Id): 38A @ 25°C
Input Capacitance (Ciss): 2600pF @ 100V
Power Dissipation (Ptot): 250W @ Tc
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
DPAK (TO-263) package with high thermal efficiency
Compatibility
Can be used as a replacement or upgrade for similar high-voltage, high-current MOSFET devices
Application Areas
Automotive power electronics
Industrial motor drives
Switch-mode power supplies
Electric vehicle (EV) traction inverters
Product Lifecycle
Currently in active production
No known plans for discontinuation
Replacements and upgrades may be available in the future
Several Key Reasons to Choose This Product
Automotive-grade reliability and performance
Excellent thermal management and power dissipation
High efficiency and low switching losses
Wide operating temperature range
Proven track record in high-voltage, high-power applications