Manufacturer Part Number
SCTWA90N65G2V-4
Manufacturer
STMicroelectronics
Introduction
High-performance silicon carbide (SiC) MOSFET power transistor for industrial and automotive applications
Product Features and Performance
Drain-to-source voltage up to 650V
Low on-resistance of 24mΩ
Wide operating temperature range of -55°C to 200°C
High continuous drain current of 119A at 25°C
Fast switching capabilities with low gate charge of 157nC
Robust design with high power dissipation of 565W
Product Advantages
Excellent efficiency and power density
Reduced cooling requirements
Improved system reliability
Compatible with standard MOSFET gate drivers
Key Technical Parameters
N-channel SiC MOSFET
650V breakdown voltage
24mΩ on-resistance
119A continuous drain current
3380pF input capacitance
+22V/-10V gate-source voltage
Quality and Safety Features
RoHS3 compliant
HiP247 long-lead package for robust mounting
Compatibility
Suitable for use in various industrial and automotive power conversion applications
Application Areas
Motor drives
Power supplies
Inverters
Electric vehicles
Renewable energy systems
Product Lifecycle
This product is an actively supported and current offering from STMicroelectronics. Replacements and upgrades may be available in the future as technology advances.
Key Reasons to Choose This Product
Excellent efficiency and power density for improved system performance
Wide operating temperature range for reliable operation in challenging environments
Fast switching and low gate charge enable high-frequency power conversion
Robust design and high power dissipation capability for durable and long-lasting operation
Compatibility with standard MOSFET gate drivers simplifies system integration