SCTWA30N120 - STMicroelectronics

Manufacturer Part Number

SCTWA30N120

Manufacturer

STMicroelectronics

Introduction

High-performance silicon carbide (SiCFET) MOSFET

Product Features and Performance

1200 V breakdown voltage

Low on-resistance of 100 mΩ

High continuous drain current of 45 A

Wide operating temperature range of -55°C to 200°C

Low input capacitance of 1700 pF

High power dissipation of 270 W

Product Advantages

Excellent efficiency and power density

Reliable and robust performance

Suitable for high-voltage, high-power applications

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 1200 V

Gate-to-Source Voltage (Vgs): +25 V, -10 V

On-Resistance (Rds(on)): 100 mΩ @ 20 A, 20 V

Continuous Drain Current (Id): 45 A @ 25°C

Input Capacitance (Ciss): 1700 pF @ 400 V

Power Dissipation (Pd): 270 W @ Tc

Quality and Safety Features

RoHS3 compliant

Through-hole mounting

HiP247 long leads package

Compatibility

Suitable for a wide range of high-voltage, high-power applications

Application Areas

Switching power supplies

Motor drives

Renewable energy systems

Industrial automation

Electric vehicles

Product Lifecycle

Currently available

No information on upcoming discontinuation or replacements

Key Reasons to Choose

High efficiency and power density

Reliable and robust performance

Wide operating temperature range

Suitable for demanding high-voltage, high-power applications