SCTW35N65G2V - STMicroelectronics

Manufacturer Part Number

SCTW35N65G2V

Manufacturer

STMicroelectronics

Introduction

High-performance N-channel silicon carbide (SiC) MOSFET for automotive and industrial applications

Product Features and Performance

Automotive-qualified (AEC-Q101)

Drain-to-Source voltage (Vdss) of 650V

Continuous Drain Current (Id) of 45A at 25°C

Low on-resistance (Rds(on)) of 67mΩ at 20A, 20V

Wide operating temperature range of -55°C to 200°C

High power density and efficiency

Fast switching speed

Low gate charge (Qg) of 73nC at 20V

Product Advantages

Excellent performance and reliability for high-power applications

Reduced switching and conduction losses

Compact and efficient design

Suitable for harsh environments

Key Technical Parameters

Vdss: 650V

Vgs (Max): +22V, -10V

Rds(on) (Max) @ Id, Vgs: 67mΩ @ 20A, 20V

Id (Continuous) @ 25°C: 45A

Ciss (Max) @ Vds: 1370pF @ 400V

Power Dissipation (Max): 240W

Quality and Safety Features

RoHS3 compliant

Automotive-grade quality and reliability (AEC-Q101)

Compatibility

Suitable for a wide range of automotive and industrial applications

Application Areas

Electric vehicles (EV) and hybrid electric vehicles (HEV)

Industrial motor drives

Renewable energy systems

Power supplies and converters

Product Lifecycle

This product is currently available and not nearing discontinuation.

Replacements and upgrades may be available in the future as technology evolves.

Key Reasons to Choose This Product

High performance and efficiency for high-power applications

Automotive-grade quality and reliability

Compact and efficient design

Suitable for harsh environments

Broad compatibility and application areas