SCTW90N65G2V - STMicroelectronics

Manufacturer Part Number

SCTW90N65G2V

Manufacturer

STMicroelectronics

Introduction

High-performance silicon carbide (SiCFET) power MOSFET

Product Features and Performance

Drain-to-source voltage up to 650V

Continuous drain current up to 90A

Low on-state resistance of 25mΩ

Wide operating temperature range of -55°C to 200°C

Fast switching performance

High power density and efficiency

Product Advantages

Improved energy efficiency

Reduced system size and weight

Enhanced reliability and lifetime

Key Technical Parameters

Vdss: 650V

Vgs (Max): +22V, -10V

Rds On (Max) @ Id, Vgs: 25mΩ @ 50A, 18V

Ciss (Max) @ Vds: 3300pF @ 400V

Power Dissipation (Max): 390W (Tc)

Vgs(th) (Max) @ Id: 5V @ 250A

Gate Charge (Qg) (Max) @ Vgs: 157nC @ 18V

Quality and Safety Features

RoHS3 Compliant

High-reliability HiP247 package

Compatibility

Through-hole mounting

Application Areas

Power conversion and control

Industrial motor drives

Renewable energy systems

Electric vehicles and hybrid electric vehicles

Product Lifecycle

Current product, no discontinuation planned

Upgrades and replacements available as technology advances

Key Reasons to Choose This Product

High efficiency and power density

Wide operating temperature range

Robust and reliable performance

Compatibility with existing systems

Compliance with RoHS regulations