L6395DTR - STMicroelectronics

Manufacturer Part Number

L6395DTR

Manufacturer

STMicroelectronics

Introduction

The L6395DTR is a high-voltage, half-bridge gate driver designed by STMicroelectronics, specialized for driving N-Channel MOSFETs and IGBTs.

Product Features and Performance

High-voltage capability (up to 600V for High Side Voltage)

Dual independent drivers for half-bridge configurations

Compatible with IGBT and N-Channel MOSFET gate types

Operating supply voltage range from 10V to 20V

Logic High and Low voltage levels at 1.9V (VIH) and 1.1V (VIL), respectively

High peak output current (Source: 290mA, Sink: 430mA)

Quick rise and fall times of 75ns and 35ns, respectively, for efficient switching

Supports non-inverting input signals

Operable across a wide temperature range (-40°C to 150°C)

Product Advantages

Enhanced efficiency through fast switching capabilities

Robust design capable of handling high-voltage applications

Flexible usage with both IGBTs and MOSFETs

Improved power management in compact devices due to small package size

Key Technical Parameters

Drive Configuration: Half-Bridge

Channel Type: Independent

Voltage Supply: 10V ~ 20V

Logic Voltage VIL, VIH: 1.1V, 1.9V

Current Peak Output (Source, Sink): 290mA, 430mA

High Side Voltage Max (Bootstrap): 600V

Rise / Fall Time (Typ): 75ns / 35ns

Operating Temperature: -40°C ~ 150°C (TJ)

Quality and Safety Features

Designed for high-temperature operation up to 150°C, ensuring reliability under stringent conditions.

Compatibility

The device's SOIC-8 packaging and non-inverting input type make it compatible with a broad range of PCB designs and control circuits.

Application Areas

Motor Control

Power Management Systems

Renewable Energy Systems

High-Voltage Power Conversion

Electronic Automotive Systems

Product Lifecycle

The product status is Active, indicating ongoing production and availability. No immediate discontinuation notice, ensuring long-term availability for new designs.

Several Key Reasons to Choose This Product

High voltage capability suited for power applications.

Versatile driving options for both IGBT and N-Channel MOSFETs enhance design flexibility.

Fast rise and fall times contribute to improved overall efficiency.

Robust performance in extreme conditions, thanks to the wide operating temperature range.

The product’s Active status promises stability in supply for production needs.