Manufacturer Part Number
L6392DTR
Manufacturer
stmicroelectronics
Introduction
Power management gate driver for half-bridge configurations
Product Features and Performance
Independent channel gate driver
Suitable for driving IGBT and N-Channel MOSFETs
High bootstrap voltage up to 600V
Fast rise and fall times of 75ns and 35ns respectively
Supports a wide supply voltage range from 12.5V to 20V
Logic input thresholds of 1.1V (VIL) and 1.9V (VIH)
Peak output currents of 290mA (source) and 430mA (sink)
Product Advantages
High voltage handling capacity enhances system robustness
Fast switching performance reduces power losses
Dual independent drivers increase design flexibility
Capability to drive a wide range of power devices
Key Technical Parameters
Driven Configuration: Half-Bridge
Channel Type: Independent
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 12.5V to 20V
Logic Voltage - VIL, VIH: 1.1V, 1.9V
Current - Peak Output (Source, Sink): 290mA, 430mA
High Side Voltage - Max (Bootstrap): 600V
Rise / Fall Time (Typ): 75ns, 35ns
Operating Temperature: -40°C to 125°C (TJ)
Quality and Safety Features
Designed for high-temperature operation up to 125°C
Reliable performance in challenging environments
Compatibility
Compatible with a wide range of IGBT and N-Channel MOSFET power devices
Surface mount 14-SOIC package for easy integration in PCB designs
Application Areas
Motor control applications
Power supply units
Inverters
Industrial automation systems
Product Lifecycle
Active product status
Not indicated as nearing discontinuation
Availability of replacements or upgrades not specified
Several Key Reasons to Choose This Product
Handles high voltages up to 600V for demanding applications
Fast switching capabilities minimize transition losses
Flexible for multiple power applications with independent driving channels
Broad operating temperature range suitable for industrial applications
Efficient thermal management for enhanced reliability
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