Manufacturer Part Number
L6391DTR
Manufacturer
STMicroelectronics
Introduction
High-voltage half-bridge gate driver with embedded comparator and operational amplifier for advanced power management
Product Features and Performance
Supports half-bridge configurations
Independent channel driving
Suitable for IGBT and N-Channel MOSFET gate driving
High voltage bootstrap circuit capable up to 600V
Fast rise and fall time for efficient switching
Input non-inverting for straightforward signal processing
Wide supply voltage range accommodating various scenarios
High temperature operational reliability
Product Advantages
Integrated comparator and operational amplifier for system simplification
High current driving capability for robust performance
Efficient power dissipation for thermal management
Extended temperature range for harsh environment usability
Key Technical Parameters
Number of Drivers: 2
Voltage - Supply: 12.5V to 20V
Logic Voltage - VIL, VIH: 1.1V, 1.9V
Current - Peak Output (Source, Sink): 290mA, 430mA
High Side Voltage - Max (Bootstrap): 600 V
Rise / Fall Time (Typ): 75ns / 35ns
Operating Temperature: -40°C to 150°C (TJ)
Quality and Safety Features
Over-temperature protection for enhanced safety
Under Voltage Lockout (UVLO) for system integrity
Compatibility
Designed to interface with various logic levels
Suitable for driving multiple gate types including IGBTs and N-Channel MOSFETs
Application Areas
Switch mode power supplies (SMPS)
Motor drive inverters
DC-DC converters
Welding equipment
Product Lifecycle
Active status indicates ongoing production and support
Long-term availability with no near-term discontinuation
Reasons to Choose This Product
Optimized for high voltage applications
Increased system efficiency through fast switching times
Enhanced reliability in extreme conditions
On-chip functionalities reduce external component requirements
STMicroelectronics' proven track record in power electronics
L6388EMTRSTMicroelectronics