Manufacturer Part Number
RMLV0816BGSB-4S2#AA0
Manufacturer
renesas-electronics-america
Introduction
The RMLV0816BGSB-4S2#AA0 is a high-performance SRAM memory chip designed specifically for high-speed data storage and retrieval.
Product Features and Performance
Memory Type: Volatile SRAM
Technology: SRAM
Memory Size: 8Mbit
Memory Organization: 512K x 16
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Voltage Supply Range: 2.4V to 3.6V
Operating Temperature Range: -40°C to 85°C
Product Advantages
Quick access and write times enhance system performance.
High reliability and stability in a range of temperatures and voltages.
Key Technical Parameters
Access Time: 45 ns
Write Cycle Time: 45 ns
Operating Voltage: 2.4V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Memory Size: 8Mbit
Quality and Safety Features
Designed for robust performance across a wide operating temperature range.
Manufactured in compliance with industry standards for safety and quality.
Compatibility
Compatible with systems requiring a parallel memory interface and 44-TSOP II packaging.
Application Areas
Suitable for use in telecommunications, computing, and industrial applications requiring fast data access and storage.
Product Lifecycle
The product is currently active with no indication of nearing discontinuation. Future upgrades or replacements will be made available as technology advances.
Several Key Reasons to Choose This Product
Reliable data storage and quick access speeds.
Operates efficiently across a broad range of temperatures and voltages.
High compatibility with current systems and technology standards.
Stable supply chain and active product lifecycle ensure long-term availability.
Excellent support and service from Renesas Electronics America.