RMLV0408EGSA-4S2#KA1 - Renesas Electronics America Inc

Manufacturer Part Number

RMLV0408EGSA-4S2#KA1

Manufacturer

renesas-electronics-america

Introduction

SRAM memory chip designed for high-speed and reliable data storage

Product Features and Performance

High-density 4Mbit memory

Parallel memory interface for rapid data access

Supports a wide voltage range from 2.7V to 3.6V

Fast access time of 45ns

Quick write cycle time for both word and page at 45ns

Operable at broad temperature range from -40°C to 85°C

Product Advantages

Robust performance in extreme temperatures

Efficient for applications requiring fast data access

Compatible with various electronic devices due to flexible voltage requirements

Significant storage capacity for a wide array of applications

Key Technical Parameters

Memory Type: Volatile SRAM

Memory Size: 4Mbit

Memory Organization: 512K x 8

Access Time: 45ns

Write Cycle: 45ns

Supply Voltage: 2.7V to 3.6V

Operating Temperature: -40°C to 85°C

Mounting Type: Surface Mount

Quality and Safety Features

Stable operation within specified temperature and voltage ranges

Encased in a 32-TFSOP package to safeguard against physical and environmental stress

Compatibility

The parallel interface and standard supply voltage make it compatible with various microcontrollers and digital systems

Application Areas

Suitable for high-speed computing systems

Electronic gaming devices

Telecommunication infrastructure

Industrial control systems

Automotive electronics

Product Lifecycle

Status: Active

No indication of discontinuation, replacements, or upgrades at this time

Several Key Reasons to Choose This Product

High-speed access suitable for advanced computing tasks

Large storage capacity within a single chip for complex applications

Durable across a wide range of environmental conditions

Consistent manufacturer quality from renesas-electronics-america

Versatile applications due to comprehensive compatibility features