RMLV0414EGSB-4S2#AA1 - Renesas Electronics America Inc

Manufacturer Part Number

RMLV0414EGSB-4S2#AA1

Manufacturer

renesas-electronics-america

Introduction

RMLV0414EGSB-4S2#AA1 is a high-performance SRAM memory chip designed for high-speed data storage and retrieval.

Product Features and Performance

Volatile memory type

SRAM technology

Memory size: 4Mbit

Organization: 256K x 16

Parallel memory interface

Access and write cycle time of 45ns

Supports wide voltage supply range of 2.7V to 3.6V

Product Advantages

Optimal speed for real-time applications

High reliability and stability

Key Technical Parameters

Memory Type: Volatile, SRAM

Memory Format: SRAM

Memory Size: 4Mbit

Memory Organization: 256K x 16

Memory Interface: Parallel

Write Cycle Time - Word, Page: 45ns

Access Time: 45 ns

Voltage - Supply: 2.7V ~ 3.6V

Operating Temperature: -40°C ~ 85°C

Quality and Safety Features

Operates across a broad temperature range (-40°C to 85°C) ensuring reliability in varied environments

Robust TSOP packaging

Compatibility

Designed for use in systems requiring high-speed, high-density memory with a parallel interface

Application Areas

Telecommunications

Embedded systems

Networking

Industrial applications

Product Lifecycle

Currently active with continued manufacturer support. Not nearing discontinuation.

Several Key Reasons to Choose This Product

Exceptional speed with 45ns access and write cycle time

High-density memory (4Mbit) useful for complex applications

Broad operating temperature range making it suitable for industrial applications

Stable and reliable memory storage solution with SRAM technology

Supports a wide range of voltage supply (2.7V to 3.6V)