Manufacturer Part Number
MT28EW256ABA1HJS-0SIT
Manufacturer
Micron Technology
Introduction
High-density NOR Flash memory designed for a range of electronic applications
Product Features and Performance
Non-Volatile FLASH Memory
256 Mbit Memory Size
Configurable Memory Organization: 32M x 8 or 16M x 16
Parallel Memory Interface for easy integration
Fast Write Cycle Time - Word, Page: 60 ns
Quick Access Time: 75 ns
Wide Voltage Supply Range: 2.7V to 3.6V
Robust Operating Temperature Range: -40°C to 85°C
Product Advantages
Reliable data retention and endurance
Uniform block architecture for easy erasing
High performance for real-time applications
Low power consumption for energy efficiency
Key Technical Parameters
Technology: FLASH - NOR
Memory Interface: Parallel
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Quality and Safety Features
Extended temperature range for high reliability
Designed to meet rigorous quality standards
Compatibility
Compatible with a wide range of microcontrollers and processors
Surface Mount 56-TFSOP packaging integrates into various PCB designs
Application Areas
Industrial control systems
Automotive electronics
Telecommunication infrastructure
Consumer electronics
Internet of Things (IoT) devices
Product Lifecycle
Active product status indicates ongoing production and availability
No indication of nearing discontinuation
Replacements or upgrades typically available through Micron Technology's roadmap
Several Key Reasons to Choose This Product
Reliable high-density storage solution
Flexibility in system design with parallel interface
Industry-proven manufacturer with strong support and documentation
Suitable for a variety of applications requiring long-term reliability
Competitive access times enhance device performance in demanding scenarios
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MT28EW512ABA1HJS-OSITMicron Technology