Manufacturer Part Number
R1LP0108ESN-5SI#B1
Manufacturer
renesas-electronics-america
Introduction
The R1LP0108ESN-5SI#B1 is a high-performance SRAM module designed for high-speed data storage and retrieval requirements.
Product Features and Performance
Volatile memory type
Utilizes SRAM technology for rapid access and writing capabilities
Memory size of 1Mbit structured in a 128K x 8 organization
Parallel memory interface
Access time of 55 ns facilitates quick data handling
Write Cycle Time - Word, Page at 55ns allows efficient data management
Product Advantages
Optimized for high-speed operations
Robust memory storage capacity
Easy integration with a range of systems due to the standard 32-SOIC package
Surface mount technology aids in compact and reliable hardware design
Key Technical Parameters
Memory Size: 1Mbit
Memory Format: SRAM
Access Time: 55 ns
Write Cycle Time: 55ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Quality and Safety Features
Built to operate reliably within a wide temperature range from -40°C to 85°C
Designed for stable performance under varying voltage supplies from 4.5V to 5.5V
Compatibility
Compatible with devices requiring a voltage supply between 4.5V and 5.5V
Suitable for applications necessitating a 32-SOIC mounting type
Application Areas
Ideal for use in advanced computing systems requiring quick data retrieval
Suitable for networking hardware and high-performance computing environments
Product Lifecycle
Currently an Active product
Not nearing discontinuation and continues to be a viable choice for new designs
Several Key Reasons to Choose This Product
Fast access and write speeds enhancing overall system efficiency
Robust environmental endurance makes it suitable for a diverse range of operating conditions
Compact and reliable mounting configuration simplifies system integration
Offers substantial memory capacity for high-demand applications
Continued product support and availability ensuring long-term usability and support