Manufacturer Part Number
R1LP0108ESN-5SI#S1
Manufacturer
Renesas Electronics America
Introduction
The R1LP0108ESN-5SI#S1 is a high-performance SRAM chip designed by Renesas Electronics America, suitable for a wide range of applications requiring reliable, fast memory solutions.
Product Features and Performance
Memory Type: Volatile
Memory Format: SRAM
Memory Size: 1Mbit
Memory Organization: 128K x 8
Memory Interface: Parallel
Write Cycle Time - Word, Page: 55ns
Access Time: 55 ns
Voltage Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.450", 11.40mm Width)
Product Advantages
Optimized for high-speed operations
Robust temperature range ensuring reliability under varying environmental conditions
Efficient power usage within a broad supply voltage range
Key Technical Parameters
Write Cycle Time: 55ns
Access Time: 55 ns
Memory Size: 1Mbit
Voltage Supply Range: 4.5V ~ 5.5V
Quality and Safety Features
Rigorous testing under extreme temperature conditions from -40°C to 85°C
Compatibility
Standard 32-SOIC package compatible with common surface mount processes
Application Areas
High-speed computing systems
Embedded systems
Consumer electronics
Automotive electronics
Product Lifecycle
Status: Active
No indication of nearing discontinuation
Continuous support and availability projected
Several Key Reasons to Choose This Product
High-speed memory access and write capabilities enhance overall system performance
Low-voltage operation helps in reducing power consumption
Durable across a wide range of operating temperatures making it suitable for rugged applications
Broad compatibility with standard manufacturing processes eases integration
Proven reliability backed by Renesas' reputation as a leading electronics manufacturer
R1LP0108ESN-7SRRenesas Electronics Corporation
R1LP0108ESA-5SI#B0Renesas Electronics America IncIC SRAM 1MBIT PARALLEL 32TSOP I