Manufacturer Part Number
R1LP0108ESN-5SI#S0
Manufacturer
Renesas Electronics Corporation
Introduction
High-performance static random-access memory (SRAM) integrated circuit
Product Features and Performance
1Mbit memory capacity
55ns access time
55ns write cycle time
Parallel memory interface
128K x 8 memory organization
Supports 4.5V to 5.5V supply voltage
Product Advantages
Wide operating temperature range of -40°C to 85°C
RoHS3 compliant
32-SOIC (0.450", 11.40mm width) package
Surface mount design
Key Technical Parameters
Memory type: Volatile SRAM
Memory size: 1Mbit
Memory interface: Parallel
Access time: 55ns
Write cycle time: 55ns
Supply voltage: 4.5V to 5.5V
Quality and Safety Features
RoHS3 compliant
Wide operating temperature range
Compatibility
Compatible with various electronic systems and devices that require high-performance SRAM
Application Areas
Suitable for use in a wide range of electronic applications, such as industrial controls, communications equipment, and consumer electronics
Product Lifecycle
Currently available, with no indication of pending discontinuation
Replacement or upgrade options may be available from the manufacturer
Several Key Reasons to Choose This Product
High-performance SRAM with 1Mbit capacity and fast access/write times
Wide operating temperature range for diverse applications
Compact 32-SOIC surface mount package
RoHS3 compliance for environmental responsibility
Reliable and compatible with various electronic systems
R1LP0108ESPAnalog Devices / Maxim Integrated