Manufacturer Part Number
R1LP0108ESA-5SI#B0
Manufacturer
Renesas Electronics Corporation
Introduction
This product is a 1Mbit Parallel SRAM (Static Random Access Memory) integrated circuit (IC) manufactured by Renesas Electronics Corporation.
Product Features and Performance
1Mbit (128K x 8) memory capacity
Parallel memory interface
55ns access time
55ns write cycle time for word and page
Operating voltage range of 4.5V to 5.5V
Operating temperature range of -40°C to 85°C
Product Advantages
High-performance SRAM with fast access and write times
Wide operating voltage and temperature ranges for versatile applications
Compact 32-TFSOP package for space-efficient design
Key Technical Parameters
Memory Type: Volatile SRAM
Package: 32-TFSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
RoHS Compliance: ROHS3 Compliant
Quality and Safety Features
Robust design and manufacturing processes for reliable performance
Compliance with RoHS3 regulations for environmental responsibility
Compatibility
Suitable for a wide range of electronic devices and systems that require high-performance SRAM
Application Areas
Embedded systems
Industrial automation and control
Telecommunications equipment
Computer and peripheral devices
Product Lifecycle
This product is an active and currently available offering from Renesas Electronics Corporation.
No information on discontinuation or availability of replacements or upgrades.
Key Reasons to Choose This Product
High-performance SRAM with fast access and write times
Wide operating voltage and temperature ranges for versatile applications
Compact and space-efficient 32-TFSOP package
Reliable design and manufacturing processes
RoHS3 compliance for environmental responsibility
Suitable for a wide range of electronic applications