PMXB120EPEZ - Nexperia USA Inc.

Manufacturer Part Number

PMXB120EPEZ

Manufacturer

Nexperia

Introduction

A P-channel enhancement mode MOSFET with low on-resistance and high switching speed.

Product Features and Performance

Low on-resistance of 120 mΩ max. at 2.4 A, 10 V

High current capability of 2.4 A continuous drain current at 25°C

Fast switching with a gate charge of 11 nC max. at 10 V

Wide operating temperature range of -55°C to 150°C

Product Advantages

Excellent performance-to-cost ratio

Reliable and robust design

Suitable for high-efficiency power conversion applications

Key Technical Parameters

Drain to Source Voltage (Vdss): 30 V

Gate to Source Voltage (Vgs): ±20 V

Input Capacitance (Ciss): 309 pF max. at 15 V

Power Dissipation: 400 mW at 25°C, 8.3 W at case temperature

Quality and Safety Features

RoHS3 compliant

Manufactured in IATF 16949 certified facilities

Compatibility

Surface mount package (DFN1010D-3)

Tape and reel packaging

Application Areas

Switching power supplies

Motor drives

LED drivers

General purpose switching applications

Product Lifecycle

Current product, no plans for discontinuation

Replacement or upgrade options available if needed

Key Reasons to Choose This Product

Excellent performance-to-cost ratio

Reliable and robust design

Wide operating temperature range

Suitable for high-efficiency power conversion applications

Streamlined compatibility and packaging options