Manufacturer Part Number
IRF6621TR1PBF
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET
Designed for power management and switching applications
Product Features and Performance
Low on-resistance (Rdson) of 9.1 mOhm
High current handling capability up to 12A (Ta) and 55A (Tc)
Wide operating temperature range of -40°C to 150°C
Low input capacitance of 1460 pF
Fast switching speed and low gate charge of 17.5 nC
Product Advantages
Efficient power conversion and management
Reliable operation in high-current applications
Compact and space-saving design
Key Technical Parameters
Drain-to-Source Voltage (VDS): 30V
Gate-to-Source Voltage (VGS): ±20V
Power Dissipation (Pd): 2.2W (Ta), 42W (Tc)
MOSFET Technology: N-Channel
Quality and Safety Features
Robust and reliable construction
Compliance with industry safety standards
Compatibility
Suitable for a wide range of power management and switching applications
Application Areas
Power supplies
Motor drives
Inverters
Switching regulators
Product Lifecycle
Current product offering
Replacements and upgrades available
Key Reasons to Choose This Product
Efficient power handling and management
Reliable and robust performance
Compact and space-saving design
Versatile compatibility for various applications