Manufacturer Part Number
PMXB56EN
Manufacturer
Nexperia
Introduction
N-Channel MOSFET transistor
Product Features and Performance
30V drain-to-source voltage (Vdss)
2A continuous drain current (Id) at 25°C
55mΩ maximum on-resistance (Rds(on)) at 3.2A, 10V
209pF maximum input capacitance (Ciss) at 15V
400mW power dissipation at 25°C, 8.33W at case temperature
-55°C to 150°C operating temperature range
Product Advantages
Low on-resistance for efficient power switching
High current capability for various power applications
Surface mount package for compact design
Key Technical Parameters
Vdss: 30V
Vgs (max): ±20V
Rds(on) (max): 55mΩ @ 3.2A, 10V
Id (continuous): 3.2A at 25°C
Ciss (max): 209pF at 15V
Power dissipation: 400mW at 25°C, 8.33W at case temperature
Quality and Safety Features
Lead-free / RoHS compliant
Moisture sensitivity level 1 (unlimited)
Compatibility
Surface mount DFN1010D-3 package
Application Areas
Power switching
Motor control
Power supply circuits
Automotive electronics
Product Lifecycle
Currently in production
Replacement or upgrade options available if needed
Key Reasons to Choose This Product
High current capability and low on-resistance for efficient power switching
Compact surface mount package for space-constrained designs
Wide operating temperature range for versatile applications
Lead-free and RoHS compliant for environmental compliance
Moisture sensitivity level 1 for reliable performance