Manufacturer Part Number
BUK6D385-100EX
Manufacturer
Nexperia
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
N-Channel MOSFET
100V Drain to Source Voltage
385mOhm Max On-Resistance @ 1.5A, 10V
4A Continuous Drain Current @ 25°C (Ta)
7A Continuous Drain Current @ 25°C (Tc)
195pF Max Input Capacitance @ 50V
8nC Max Gate Charge @ 10V
-55°C to 175°C Operating Temperature Range
Product Advantages
Automotive-qualified (AEC-Q101)
RoHS3 Compliant
6-UDFN Exposed Pad Package
Key Technical Parameters
Drain to Source Voltage (Vdss): 100V
Gate to Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 385mOhm @ 1.5A, 10V
Threshold Voltage (Vgs(th)): 2.7V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Power Dissipation: 2W (Ta), 15W (Tc)
Quality and Safety Features
Automotive-qualified (AEC-Q101)
RoHS3 Compliant
Compatibility
Compatible with various electronic circuits and systems
Application Areas
Automotive electronics
Industrial power management
General-purpose power switching
Product Lifecycle
Currently in production
Replacement or upgrade options available
Key Reasons to Choose This Product
Automotive-qualified for reliable performance
Low on-resistance for efficient power handling
Wide operating temperature range
Small 6-UDFN package for compact designs
RoHS3 compliance for environmental friendliness