Manufacturer Part Number
BUK6D125-60EX
Manufacturer
Nexperia
Introduction
Discrete Semiconductor Product
Transistor FET, MOSFET Single
Product Features and Performance
ROHS3 Compliant
Automotive, AEC-Q101 Qualified
N-Channel MOSFET
Wide Operating Temperature Range: -55°C to 175°C
High Drain-Source Voltage: 60V
Low On-Resistance: 125mOhm @ 2.7A, 10V
High Continuous Drain Current: 2.7A (Ta), 7.4A (Tc)
Low Input Capacitance: 196pF @ 30V
High Power Dissipation: 2W (Ta), 15W (Tc)
Low Gate Threshold Voltage: 2.7V @ 250A
Product Advantages
Suitable for Automotive and Industrial Applications
Excellent Thermal Performance
Robust and Reliable Design
Easy to Drive and Integrate
Key Technical Parameters
Drain to Source Voltage (Vdss): 60V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 125mOhm @ 2.7A, 10V
Continuous Drain Current (Id): 2.7A (Ta), 7.4A (Tc)
Input Capacitance (Ciss): 196pF @ 30V
Power Dissipation (Max): 2W (Ta), 15W (Tc)
Quality and Safety Features
ROHS3 Compliant
Automotive, AEC-Q101 Qualified
Compatibility
Surface Mount Package: 6-UDFN Exposed Pad
Application Areas
Automotive Electronics
Industrial Power Supplies
Motor Control
Lighting Systems
Product Lifecycle
Current Product
Replacements and Upgrades Available
Key Reasons to Choose This Product
Excellent Thermal Performance and High Power Handling Capability
Low On-Resistance for Efficient Power Switching
Wide Operating Temperature Range for Diverse Applications
Robust and Reliable Design for Automotive and Industrial Use
Easy to Drive and Integrate into System Designs