Manufacturer Part Number
BUK6D210-60EX
Manufacturer
Nexperia
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
N-Channel MOSFET
60V Drain-Source Voltage
210mOhm On-Resistance
1A Continuous Drain Current (Ta), 5.7A (Tc)
110pF Input Capacitance
2W Power Dissipation (Ta), 15W (Tc)
-55°C to 175°C Operating Temperature
Product Advantages
Automotive-qualified (AEC-Q101)
Compact 6-UDFN Exposed Pad package
Optimized for high-efficiency and high-density power conversion
Key Technical Parameters
Vds: 60V
Vgs(Max): ±20V
Rds(on) @ Id, Vgs: 210mOhm @ 2.1A, 10V
Ciss: 110pF @ 30V
Qg: 3.8nC @ 10V
Quality and Safety Features
RoHS3 Compliant
Compatibility
Compatible with automotive and industrial applications
Application Areas
Power management
Motor control
Lighting
Telecommunications
Product Lifecycle
Currently in production
Replacements and upgrades available
Key Reasons to Choose
Automotive-qualified for reliability
Efficient power handling in compact package
Optimized for high-density power conversion
Wide operating temperature range