Manufacturer Part Number
BUK6Y14-40PX
Manufacturer
Nexperia
Introduction
This product is a P-Channel MOSFET transistor from Nexperia's TrenchMOS series, designed for automotive and industrial applications.
Product Features and Performance
40V drain-to-source voltage
14mΩ maximum on-resistance
64A continuous drain current at 25°C
110W maximum power dissipation
Supports operating temperatures from -55°C to 175°C
Low gate charge of 64nC at 10V
Product Advantages
Automotive-qualified to AEC-Q101 standard
Robust TrenchMOS technology
Compact LFPAK56 and Power-SO8 package options
Suitable for high-power, high-temperature applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 40V
Maximum Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 14mΩ @ 10.8A, 10V
Input Capacitance (Ciss): 2300pF @ 20V
Gate Charge (Qg): 64nC @ 10V
Quality and Safety Features
RoHS3 compliant
Automotive-grade AEC-Q101 qualification
Compatibility
This MOSFET is compatible with a wide range of automotive and industrial applications.
Application Areas
Power management circuits
Motor control
Switching power supplies
Automotive electronics
Product Lifecycle
This product is actively supported by Nexperia and is not nearing discontinuation. Replacement or upgraded options may be available in the future as technology advances.
Key Reasons to Choose This Product
Robust automotive-qualified design for reliable performance in harsh environments
Low on-resistance and high current capability for efficient power management
Compact and thermally-efficient package options for space-constrained designs
Proven TrenchMOS technology for low gate charge and fast switching
Comprehensive technical parameters and broad compatibility for design flexibility
BUK7105-40AIEFreescale / NXP Semiconductors