Manufacturer Part Number
BUK6Y61-60PX
Manufacturer
Nexperia
Introduction
High-performance P-channel enhancement-mode power MOSFET in a LFPAK56 (Power-SO8) package, suitable for automotive applications.
Product Features and Performance
Automotive qualified to AEC-Q101 standard
Trench MOS technology for low on-resistance
Low gate charge for efficient switching
Low output capacitance for fast switching
High maximum drain current rating of 25A
Product Advantages
Excellent thermal performance
High reliability and ruggedness
Suitable for high-power density designs
Efficient power conversion
Key Technical Parameters
Drain-Source Voltage (Vdss): 60V
On-Resistance (Rds(on)): 61mΩ
Continuous Drain Current (Id): 25A
Gate-Source Voltage (Vgs): ±20V
Operating Temperature: -55°C to 175°C
Quality and Safety Features
RoHS3 compliant
LFPAK56 (Power-SO8) package for high power density
Automotive-grade design and qualification
Compatibility
Suitable for a wide range of automotive and industrial applications
Application Areas
Power management
Motor control
Switching power supplies
Automotive electronics
Product Lifecycle
Current product, not nearing discontinuation
Replacements and upgrades available as needed
Key Reasons to Choose This Product
High performance and reliability for automotive applications
Excellent thermal management and power density
Efficient switching and low on-resistance
Automotive qualification to the AEC-Q101 standard
Availability of replacements and upgrades
BUK714R1-40BTFreescale / NXP Semiconductors
BUK7108-40AIELUMILEDS