MMBT4401 - NTE Electronics, Inc

Manufacturer Part Number

MMBT4401

Manufacturer

NTE Electronics, Inc.

Introduction

The MMBT4401 is a small-signal NPN bipolar junction transistor (BJT) suitable for various low-power, high-frequency amplifier and switching applications.

Product Features and Performance

Small-signal NPN bipolar transistor

Capable of operating at high frequencies up to 250 MHz

Low collector-emitter saturation voltage

Suitable for a wide range of low-power, high-frequency amplifier and switching applications

Product Advantages

Compact surface-mount package for efficient board space utilization

High-frequency operation up to 250 MHz

Low saturation voltage for efficient switching and amplification

Wide operating temperature range of -55°C to 150°C

Key Technical Parameters

Collector-Emitter Breakdown Voltage (Max): 40 V

Collector Current (Max): 600 mA

Power Dissipation (Max): 350 mW

DC Current Gain (hFE): Minimum of 100 @ 150 mA, 1 V

Transition Frequency: 250 MHz

Quality and Safety Features

RoHS non-compliant

Compatibility

Compatible with TO-236-3, SC-59, and SOT-23-3 packages

Application Areas

Amplifier circuits

Switching circuits

General-purpose low-power, high-frequency applications

Product Lifecycle

The MMBT4401 is an active product and there are no indications of it being discontinued or replaced in the near future.

Key Reasons to Choose the MMBT4401

High-frequency performance up to 250 MHz

Low collector-emitter saturation voltage for efficient operation

Wide operating temperature range of -55°C to 150°C

Compact surface-mount package for efficient board space utilization

Suitable for a variety of low-power, high-frequency amplifier and switching applications