Manufacturer Part Number
MMBT4401
Manufacturer
Diotec Semiconductor
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT), Single
Product Features and Performance
RoHS3 Compliant
SOT-23-3 (TO-236) Package
Operating Temperature: -55°C to 150°C
Power Rating: 300mW
Collector-Emitter Breakdown Voltage (Max): 40V
Collector Current (Max): 600mA
Collector Cutoff Current (Max): 100nA
Collector-Emitter Saturation Voltage (Max): 750mV @ 50mA/500mA
DC Current Gain (hFE) (Min): 100 @ 150mA/1V
Transition Frequency: 250MHz
Surface Mount Mounting Type
Product Advantages
Compact and space-saving SOT-23-3 package
Wide operating temperature range
High power and current handling capabilities
High gain and switching speed
Key Technical Parameters
Power Rating: 300mW
Collector-Emitter Breakdown Voltage: 40V
Collector Current: 600mA
DC Current Gain: 100 (Min)
Transition Frequency: 250MHz
Quality and Safety Features
RoHS3 Compliant
Designed for reliable and safe operation
Compatibility
Suitable for a wide range of electronic circuit applications
Application Areas
Amplifiers
Switches
Logic gates
Driver circuits
General-purpose signal processing
Product Lifecycle
Currently available
No information on discontinuation or upgrades
Key Reasons to Choose This Product
Compact and space-saving package
Wide operating temperature range
High power and current handling capabilities
High gain and switching speed
RoHS3 compliance for environmental safety
Suitable for a wide range of applications