MMBT4401 - ANBON SEMICONDUCTOR (INT'L) LIMITED

Manufacturer Part Number

MMBT4401

Manufacturer

ANBON SEMICONDUCTOR (INT'L) LIMITED

Introduction

The MMBT4401 is a general-purpose NPN bipolar junction transistor (BJT) designed for a wide range of amplifier and switching applications.

Product Features and Performance

High-frequency performance with a transition frequency (fT) of 250 MHz

Able to handle a maximum collector current (Ic) of 600 mA

Supports a maximum collector-emitter voltage (VCEO) of 40 V

Operates within a wide temperature range of -55°C to 150°C

Product Advantages

Reliable and robust construction

Cost-effective solution for various electronic applications

High-frequency capabilities for efficient switching and amplification

Key Technical Parameters

Power Rating: 350 mW

Collector-Emitter Breakdown Voltage (VCEO): 40 V

Collector Current (Ic): 600 mA

Collector Cutoff Current (ICBO): 100 nA

VCE Saturation Voltage: 750 mV @ 50 mA, 500 mA

DC Current Gain (hFE): Min. 100 @ 150 mA, 1 V

Transition Frequency (fT): 250 MHz

Quality and Safety Features

RoHS3 compliant for environmental responsibility

Reliable performance and long lifespan

Compatibility

Surface mount package: SOT-23-3L

Compatible with a wide range of electronic circuits and systems

Application Areas

Amplifier circuits

Switching applications

General-purpose electronic circuits

Product Lifecycle

The MMBT4401 is an actively supported product and is not nearing discontinuation. Replacement or upgrade options are available if needed.

Key Reasons to Choose This Product

High-frequency performance for efficient switching and amplification

Ability to handle high current and voltage levels

Robust and reliable construction for long-term use

Cost-effective solution for a wide range of electronic applications

RoHS3 compliance for environmental responsibility