MMBT4401-7-F - Diodes Incorporated

Manufacturer Part Number

MMBT4401-7-F

Manufacturer

Diodes Incorporated

Introduction

NPN Bipolar Junction Transistor (BJT)

Product Features and Performance

Supports high-power applications with 310mW max power

Wide operating temperature range of -55°C to 150°C

High collector-emitter breakdown voltage up to 40V

High collector current capacity up to 600mA

Low collector-emitter saturation voltage down to 500mV

High current gain of 100 at 150mA, 1V

High transition frequency of 250MHz

Product Advantages

Automotive-grade design for rugged applications

AEC-Q101 qualified for reliable performance

RoHS3 compliant for environmental compliance

Available in space-saving SOT-23-3 package

Key Technical Parameters

Collector-Emitter Breakdown Voltage (Max): 40V

Collector Current (Max): 600mA

Collector Cutoff Current (Max): 100nA

Collector-Emitter Saturation Voltage (Max): 500mV @ 500mA

DC Current Gain (Min): 100 @ 150mA, 1V

Transition Frequency: 250MHz

Quality and Safety Features

AEC-Q101 qualified for automotive applications

RoHS3 compliant for hazardous substance restrictions

Packaged in reliable SOT-23-3 surface mount design

Compatibility

Suitable for a wide range of electronic circuits and systems

Application Areas

Automotive electronics

Power management circuits

Switching and amplifier applications

General-purpose electronic designs

Product Lifecycle

Current production product, no discontinuation planned

Replacement and upgrade options available as needed

Key Reasons to Choose

Automotive-grade reliability and performance

Compact and space-saving package

Wide operating temperature range

High power handling and current capacity

Low saturation voltage for efficient operation

High current gain and transition frequency

RoHS3 compliance for environmental responsibility