NAND512W3A2CN6E - Micron Technology Inc.

Manufacturer Part Number

NAND512W3A2CN6E

Manufacturer

Micron Technology

Introduction

Integrated Circuit (IC) for memory applications

NAND flash memory device

Product Features and Performance

512Mbit non-volatile memory

Parallel memory interface

Fast access time of 50ns

Wide operating temperature range of -40°C to 85°C

Low voltage operation from 2.7V to 3.6V

Product Advantages

High-density NAND flash memory

Reliable and durable non-volatile storage

Suitable for a variety of embedded applications

Key Technical Parameters

Memory size: 512Mbit

Memory organization: 64M x 8

Memory type: NAND flash

Access time: 50ns

Write cycle time: 50ns

Operating voltage: 2.7V to 3.6V

Operating temperature: -40°C to 85°C

Quality and Safety Features

RoHS3 compliant

48-TSOP package for surface mount

Compatibility

Compatible with a wide range of embedded systems and devices

Application Areas

Suitable for use in various embedded systems, industrial equipment, and consumer electronics

Product Lifecycle

Current product, no discontinuation plans

Replacements and upgrades available as needed

Key Reasons to Choose

High-density NAND flash memory for reliable data storage

Fast access and write performance

Wide operating temperature range for versatile applications

RoHS3 compliance for environmental safety

Surface mount package for easy integration