Manufacturer Part Number
NAND512R3A2CZA6E
Manufacturer
Micron Technology
Introduction
The NAND512R3A2CZA6E is a 512Mbit NAND Flash memory device.
Product Features and Performance
Non-Volatile memory technology
Memory Size of 512Mbit
Organized as 64M x 8
Parallel Memory Interface
Write Cycle Time of 50ns
Access Time of 50ns
Supply Voltages between 1.7V and 1.95V
Suitable for applications requiring high-density data storage
Product Advantages
Robust storage device with large capacity for intensive memory applications
Durable under a wide range of temperatures from -40°C to 85°C
Key Technical Parameters
Memory Type FLASH - NAND
Memory Format FLASH
Memory Size 512Mbit
Memory Organization 64M x 8
Write Cycle Time - Word, Page 50ns
Access Time 50ns
Voltage - Supply 1.7V ~ 1.95V
Operating Temperature -40°C ~ 85°C (TA)
Quality and Safety Features
Operates reliably within industrial temperature ranges
Compatibility
Compatible with systems requiring Parallel memory interface
Application Areas
Can be used in embedded systems, digital cameras, MP3 players, and other devices requiring high storage capacity
Product Lifecycle
Obsolete Product
Potential for limited availability
Consider alternatives or upgrades for future designs
Several Key Reasons to Choose This Product
High-density NAND Flash Memory suitable for mass storage
Fast write and access times for efficient operation
Wide operating temperature range ensures reliability in diverse environments
Micron Technology's reputation for durable and dependable memory products
Surface Mount 63-TFBGA packaging for space-efficient PCB design
NAND512R3A2SZA6STMicroelectronics
NAND512R3A2CZA6