NAND512R3A2CZA6E - Micron Technology Inc.

Manufacturer Part Number

NAND512R3A2CZA6E

Manufacturer

Micron Technology

Introduction

The NAND512R3A2CZA6E is a 512Mbit NAND Flash memory device.

Product Features and Performance

Non-Volatile memory technology

Memory Size of 512Mbit

Organized as 64M x 8

Parallel Memory Interface

Write Cycle Time of 50ns

Access Time of 50ns

Supply Voltages between 1.7V and 1.95V

Suitable for applications requiring high-density data storage

Product Advantages

Robust storage device with large capacity for intensive memory applications

Durable under a wide range of temperatures from -40°C to 85°C

Key Technical Parameters

Memory Type FLASH - NAND

Memory Format FLASH

Memory Size 512Mbit

Memory Organization 64M x 8

Write Cycle Time - Word, Page 50ns

Access Time 50ns

Voltage - Supply 1.7V ~ 1.95V

Operating Temperature -40°C ~ 85°C (TA)

Quality and Safety Features

Operates reliably within industrial temperature ranges

Compatibility

Compatible with systems requiring Parallel memory interface

Application Areas

Can be used in embedded systems, digital cameras, MP3 players, and other devices requiring high storage capacity

Product Lifecycle

Obsolete Product

Potential for limited availability

Consider alternatives or upgrades for future designs

Several Key Reasons to Choose This Product

High-density NAND Flash Memory suitable for mass storage

Fast write and access times for efficient operation

Wide operating temperature range ensures reliability in diverse environments

Micron Technology's reputation for durable and dependable memory products

Surface Mount 63-TFBGA packaging for space-efficient PCB design