NAND512R3A2SZA6E - Micron Technology Inc.

Manufacturer Part Number

NAND512R3A2SZA6E

Manufacturer

Micron Technology

Introduction

The NAND512R3A2SZA6E is a NAND FLASH memory device designed for high-speed, reliable non-volatile storage of digital data. Suitable for robust applications requiring data preservation during power loss.

Product Features and Performance

Non-Volatile FLASH Memory

Memory Size of 512Mbit

Organized as 64M x 8 (64 Megabytes)

Parallel Memory Interface

Write Cycle Time: 50ns

Access Time: 50ns

FLASH Technology based on NAND architecture

Product Advantages

High-density memory storage

Durable data retention and fast access

Low power consumption

Key Technical Parameters

Memory Size: 512Mbit

Memory Organization: 64M x 8

Voltage Supply: 1.7V ~ 1.95V

Write Cycle Time Word, Page: 50ns

Access Time: 50 ns

Operating Temperature Range: -40°C ~ 85°C

Quality and Safety Features

Operates within a wide temperature range: -40°C to 85°C ensuring reliability under extreme conditions

Surface Mount Technology for secure and compact placement on circuit boards

Compatibility

Designed for applications requiring parallel interface data transmissions

Application Areas

Embedded Systems

Digital Cameras

MP3 Players

Mobile Phones

Set-Top Boxes

Product Lifecycle

Status: Obsolete

Availability of replacements or upgrades needs to be checked with manufacturer or authorized distributors

Several Key Reasons to Choose This Product

High data density and compact physical size ideal for space-constrained applications

Reliable storage solution with durability in harsh environments from -40°C to 85°C

Efficient data access and processing speeds with 50 ns access and write cycle times

Supported by Micron Technology, a leader in advanced semiconductor solutions