Manufacturer Part Number
NAND512W3A2DN6E
Manufacturer
Micron Technology
Introduction
This is a 512Mbit FLASH memory device employing NAND technology, suitable for a wide range of digital storage needs.
Product Features and Performance
Non-Volatile FLASH memory
512Mbit memory size
Organized as 64M x 8bit
Parallel memory interface for easy integration
Access time of 50ns, enabling quick read operations
Write Cycle Time Word, Page is 50ns, facilitating fast data entry and manipulation
Product Advantages
High-density storage solution
Provides reliable non-volatile storage
Fast read and write capabilities enhance device performance
Wide operating temperature range (-40°C to 85°C) ensures functionality in various environments
Key Technical Parameters
Memory Type: FLASH NAND
Memory Size: 512Mbit
Memory Organization: 64M x 8
Memory Interface: Parallel
Write Cycle Time Word, Page: 50ns
Voltage Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Quality and Safety Features
Designed for high reliability and durability under a wide range of environmental conditions
Compatibility
The parallel interface and standard voltage supply range ensure compatibility with a wide range of microcontrollers and digital systems
Application Areas
Embedded systems
Digital cameras
MP3 players
Portable media players
Other applications requiring high-density, non-volatile memory storage
Product Lifecycle
Obsolete status, indicating it is nearing discontinuation
Replacement or upgrade options may be limited; contact Micron Technology for support and alternatives
Several Key Reasons to Choose This Product
High storage capacity meets the needs of complex digital systems
Fast access and write times enhance system performance
Wide operating temperature range supports use in diverse environments
Micron Technology's reputation for quality and reliability
Though obsolete, may still provide a cost-effective solution for certain legacy applications