Manufacturer Part Number
LND150K1-G
Manufacturer
Microchip Technology
Introduction
Discrete Semiconductor Product
Single Transistor MOSFET (Field Effect Transistor)
Product Features and Performance
High voltage capability (500V drain-source voltage)
Low on-resistance (1000 ohms max @ 500mA, 0V gate-source)
Low input capacitance (10pF max @ 25V drain-source)
Wide operating temperature range (-55°C to 150°C junction temperature)
Depletion mode MOSFET
360mW maximum power dissipation
Product Advantages
Suitable for high voltage switch applications
Enables efficient power management
Compact surface mount package
Key Technical Parameters
Drain-Source Voltage (Vdss): 500V
Gate-Source Voltage (Vgs): ±20V
Continuous Drain Current (Id): 13mA @ 25°C
On-Resistance (Rds(on)): 1000 ohms max @ 500mA, 0V
Input Capacitance (Ciss): 10pF max @ 25V
Quality and Safety Features
RoHS3 compliant
Suitable for industrial and consumer applications
Compatibility
SOT-23-3 package
Compatible with standard MOSFET circuit designs
Application Areas
High voltage switching
Power management circuits
Industrial and consumer electronics
Product Lifecycle
Current production model
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
High voltage capability for demanding applications
Low on-resistance for efficient power handling
Small package size for space-constrained designs
Wide operating temperature range for reliable performance
Depletion mode operation for simplified circuit design