Manufacturer Part Number
LND01K1-G
Manufacturer
Microchip Technology
Introduction
This product is a discrete semiconductor device, specifically a single N-Channel MOSFET transistor.
Product Features and Performance
Depletion mode MOSFET
Continuous drain current of 330mA at 25°C
Low on-resistance of 1.4Ω @ 100mA, 0V
Wide operating temperature range of -25°C to 125°C
Low input capacitance of 46pF @ 5V
Product Advantages
Excellent performance characteristics for a wide range of applications
Compact surface mount packaging (SOT-23-5)
RoHS3 compliant
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 9V
Gate Voltage (Vgs): +0.6V/-12V
Power Dissipation (Max): 360mW
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
This MOSFET can be used in a wide range of electronic circuits and applications.
Application Areas
General-purpose switching and amplification
Power management circuits
Battery-powered devices
Industrial and consumer electronics
Product Lifecycle
The LND01K1-G is an actively supported product, and there are no plans for discontinuation. Replacement or upgrade options are available if needed.
Key Reasons to Choose This Product
Excellent performance characteristics for the price point
Compact and efficient surface mount packaging
Wide operating temperature range and high reliability
RoHS3 compliance for environmentally-conscious designs
Availability of drop-in replacement options if needed in the future