Manufacturer Part Number
NTD2955T4G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
P-Channel MOSFET Transistor
Product Features and Performance
60V Drain-to-Source Voltage
12A Continuous Drain Current
180mΩ On-Resistance
55W Power Dissipation
-55°C to 175°C Operating Temperature Range
750pF Input Capacitance
30nC Gate Charge
Product Advantages
Robust and reliable performance
Efficient power handling
Wide operating temperature range
Suitable for various power conversion applications
Key Technical Parameters
Drain-to-Source Voltage: 60V
Gate-to-Source Voltage: ±20V
On-Resistance: 180mΩ
Continuous Drain Current: 12A
Power Dissipation: 55W
Operating Temperature Range: -55°C to 175°C
Quality and Safety Features
RoHS3 Compliant
DPAK Packaging for Surface Mount
Compatibility
Compatible with various power supply and power conversion circuits
Application Areas
Power supplies
Motor drives
Switching regulators
Power amplifiers
Industrial and consumer electronics
Product Lifecycle
Currently available
No immediate plans for discontinuation
Replacement or upgrade options may be available
Several Key Reasons to Choose This Product
Robust and reliable performance in a wide range of operating conditions
Efficient power handling capabilities
Compact and space-saving DPAK package for surface mount applications
Suitable for various power conversion and control applications in industrial and consumer electronics