Manufacturer Part Number
NTD2955-1G
Manufacturer
onsemi
Introduction
P-channel power MOSFET transistor
Product Features and Performance
60V drain-to-source voltage
180mΩ maximum on-state resistance
12A continuous drain current at 25°C
55W maximum power dissipation
-55°C to 175°C operating temperature range
Low gate charge of 30nC at 10V
Product Advantages
Efficient power switching performance
Low on-state resistance for low power loss
Wide operating temperature range
Key Technical Parameters
Drain-to-source voltage (Vdss): 60V
Maximum gate-to-source voltage (Vgs): ±20V
On-state resistance (Rds(on)): 180mΩ @ 6A, 10V
Continuous drain current (Id): 12A at 25°C
Input capacitance (Ciss): 750pF @ 25V
Power dissipation (Pd): 55W
Quality and Safety Features
RoHS3 compliant
I-PAK packaging for reliable performance
Compatibility
Through-hole mounting
Application Areas
Power supply, motor control, and other power switching applications
Product Lifecycle
Currently in production
Replacement or upgrade options may be available
Several Key Reasons to Choose This Product
Efficient power switching performance with low on-state resistance
Wide operating temperature range for versatile applications
Reliable I-PAK packaging for long-term durability
RoHS3 compliance for environmentally-friendly use
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