IRF7769L1TRPBF - Infineon Technologies

Manufacturer Part Number

IRF7769L1TRPBF

Manufacturer

Infineon Technologies

Introduction

High-performance N-Channel MOSFET transistor

Designed for power management and control applications

Product Features and Performance

Operating temperature range: -55°C to 175°C

Drain-to-source voltage (Vdss): 100V

Maximum gate-to-source voltage (Vgs): ±20V

Low on-resistance (Rds(on)): 3.5mΩ @ 74A, 10V

Continuous drain current (Id): 20A (Ta), 124A (Tc)

Input capacitance (Ciss): 11,560pF @ 25V

Power dissipation: 3.3W (Ta), 125W (Tc)

N-channel MOSFET technology

Product Advantages

Excellent performance for power management and control

High power density and efficiency

Reliable operation across wide temperature range

Compact DirectFET Isometric L8 package

Key Technical Parameters

Drain-to-source voltage (Vdss): 100V

Gate-to-source voltage (Vgs): ±20V

On-resistance (Rds(on)): 3.5mΩ @ 74A, 10V

Continuous drain current (Id): 20A (Ta), 124A (Tc)

Input capacitance (Ciss): 11,560pF @ 25V

Power dissipation: 3.3W (Ta), 125W (Tc)

Quality and Safety Features

RoHS3 compliant

Suitable for high-reliability applications

Compatibility

Compatible with a wide range of power management and control systems

Application Areas

Power supplies

Servo drives

Motor drives

Industrial automation

Telecommunications equipment

Product Lifecycle

Currently in production

No plans for discontinuation or replacement at this time

Several Key Reasons to Choose This Product

High power density and efficiency

Reliable operation across wide temperature range

Excellent performance for power management and control

Compact and space-saving DirectFET Isometric L8 package

RoHS3 compliant for use in high-reliability applications