Manufacturer Part Number
IRF7759L2TRPBF
Manufacturer
Infineon Technologies
Introduction
High-performance DirectFET N-Channel MOSFET
Product Features and Performance
Optimized for high-frequency switching applications
Very low on-resistance and gate charge
Excellent thermal performance
Highly reliable and robust design
Product Advantages
Compact and efficient power conversion
Improved system efficiency
Reduced thermal management requirements
Enhanced reliability and lifetime
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 75V
Maximum Gate-to-Source Voltage (Vgs(max)): ±20V
On-Resistance (Rds(on)): 2.3mΩ @ 96A, 10V
Continuous Drain Current (Id): 26A (Ta), 375A (Tc)
Input Capacitance (Ciss): 12,222pF @ 25V
Power Dissipation: 3.3W (Ta), 125W (Tc)
Operating Temperature: -55°C to 175°C (TJ)
Quality and Safety Features
Robust design for reliable operation
Compliance with industry safety standards
Compatibility
Suitable for a wide range of high-frequency power conversion and switching applications
Application Areas
Switch-mode power supplies
DC-DC converters
Motor drives
Inverters
Lighting and industrial control systems
Product Lifecycle
Current production model
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Exceptional performance and efficiency in high-frequency switching applications
Compact and thermally efficient design for space-constrained systems
Proven reliability and long operational life
Compatibility with a broad range of power conversion and control applications
IRF7756TRPBFInfineon TechnologiesMOSFET 2P-CH 12V 4.3A 8TSSOP