Manufacturer Part Number
IRF7780MTRPBF
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel power MOSFET in DirectFET Isometric ME package
Product Features and Performance
Suitable for high-current, high-frequency switching applications
Low on-resistance for low conduction losses
Fast switching speed for efficient operation
High power density and thermal performance
Product Advantages
Compact DirectFET Isometric ME package
Low on-resistance
High current capability
Fast switching speed
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 75 V
Maximum Gate-to-Source Voltage (Vgs(max)): ±20 V
On-Resistance (Rds(on)): 5.7 mΩ @ 53 A, 10 V
Continuous Drain Current (Id): 89 A @ 25°C (Tc)
Input Capacitance (Ciss): 6504 pF @ 25 V
Power Dissipation (Pd): 96 W @ 25°C (Tc)
Operating Temperature Range: -55°C to 150°C (TJ)
Quality and Safety Features
MOSFET technology for reliable performance
Designed and manufactured to high quality standards
Compatibility
Suitable for high-current, high-frequency switching applications
Application Areas
Power supplies
Motor drives
Inverters
Industrial and automotive electronics
Product Lifecycle
Currently in production
Replacements and upgrades may be available
Key Reasons to Choose This Product
High current capability
Low on-resistance for efficient operation
Fast switching speed for high-frequency applications
Compact DirectFET Isometric ME package for high power density
Reliable MOSFET technology and high-quality manufacturing
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