APT13GP120BDQ1G - Microchip Technology

Manufacturer Part Number

APT13GP120BDQ1G

Manufacturer

Microchip Technology

Introduction

High-power IGBT transistor with advanced power handling capabilities

Product Features and Performance

High voltage rating up to 1200V

High current rating up to 41A

Low conduction losses with Vce(on) of 3.9V @ 15V, 13A

Fast switching with turn-on/off times of 9ns/28ns

High power handling capacity up to 250W

Product Advantages

Excellent thermal performance for high-power applications

Reliable and robust design

Optimized for efficient power conversion and control

Key Technical Parameters

Collector-Emitter Breakdown Voltage (max): 1200V

Collector Current (max): 41A

Collector-Emitter Saturation Voltage: 3.9V @ 15V, 13A

Gate Charge: 55nC

Switching Energy: 115μJ (on), 165μJ (off)

Operating Temperature Range: -55°C to 150°C

Quality and Safety Features

RoHS3 compliant

Packaged in reliable TO-247 [B] package

Compatibility

Compatible with a wide range of power electronics applications

Application Areas

High-power motor drives

Power supplies

Welding equipment

Induction heating systems

Uninterruptible power supplies (UPS)

Product Lifecycle

Current active product

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

Excellent power handling and efficiency

Fast, reliable switching performance

Robust and thermally capable design

Proven reliability and quality

Compatibility with diverse power electronics applications