Manufacturer Part Number
APT150GN120JDQ4
Manufacturer
Microchip Technology
Introduction
High-power insulated gate bipolar transistor (IGBT) module for industrial applications
Product Features and Performance
Trench field stop IGBT technology
Standard input configuration
Single IGBT module
High current capability up to 215A
High voltage rating up to 1200V
Low on-state voltage drop of 2.1V at 150A
Product Advantages
High power density
Efficient power conversion
Reliable performance
Key Technical Parameters
Input Capacitance (Cies): 9.5nF @ 25V
Collector-Emitter Breakdown Voltage (VCES): 1200V
Collector Current (IC): 215A
On-state Voltage Drop (VCE(on)): 2.1V @ 15V, 150A
Quality and Safety Features
RoHS3 compliant
Operating temperature range: -55°C to 150°C
Compatibility
Chassis mount package
Application Areas
Industrial motor drives
Power converters
Welding equipment
Induction heating systems
Product Lifecycle
This product is currently available and not nearing discontinuation
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
High power capability for demanding applications
Efficient power conversion with low on-state voltage drop
Reliable performance over wide temperature range
Compatibility with standard chassis mount packages