APT13GP120BG - Microchip Technology

Manufacturer Part Number

APT13GP120BG

Manufacturer

Microchip Technology

Introduction

Discrete Semiconductor Product

Single Transistor IGBT

Product Features and Performance

RoHS3 Compliant

TO-247 [B] Packaging

Through Hole Mounting

POWER MOS 7 Series

Tube Packaging

Operating Temperature: -55°C to 150°C

Power Rating: 250W

IGBT Type: PT

Collector-Emitter Breakdown Voltage: 1200V

Collector Current (Max): 41A

Collector-Emitter Saturation Voltage (Vce(on)): 3.9V @ 15V, 13A

Gate Charge: 55nC

Pulsed Collector Current: 50A

Switching Energy: 115J (on), 165J (off)

Turn-on/off Delay Time: 9ns/28ns

Product Advantages

High power handling capability

Low conduction and switching losses

Reliable performance in high-power applications

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 1200V

Current Collector (Ic) (Max): 41A

Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 13A

Gate Charge: 55nC

Current Collector Pulsed (Icm): 50A

Switching Energy: 115J (on), 165J (off)

Td (on/off) @ 25°C: 9ns/28ns

Quality and Safety Features

RoHS3 Compliant

Compatibility

Through Hole Mounting

Application Areas

High-power industrial and consumer electronics applications

Product Lifecycle

Currently available

No information on discontinuation or replacement

Several Key Reasons to Choose This Product

High power handling capability

Low conduction and switching losses

Reliable performance in high-power applications

RoHS3 compliant for environmental safety

Compatibility with through-hole mounting