Manufacturer Part Number
APT150GT120JR
Manufacturer
Microchip Technology
Introduction
The APT150GT120JR is a high-performance Insulated Gate Bipolar Transistor (IGBT) module from Microchip Technology. It is part of the Thunderbolt IGBT series.
Product Features and Performance
Operating temperature range of -55°C to 150°C (TJ)
Maximum power rating of 830 W
NPT IGBT type
Standard input configuration
Single IGBT configuration
Input capacitance (Cies) of 9.3 nF at 25 V
Maximum collector-emitter breakdown voltage of 1200 V
Maximum collector current (Ic) of 170 A
Maximum collector-emitter saturation voltage (Vce(on)) of 3.7 V at 15 V gate voltage and 150 A collector current
Maximum collector cutoff current of 150 A
Product Advantages
High-performance IGBT module for efficient power conversion
Wide operating temperature range
Robust and reliable design
Key Technical Parameters
Manufacturer Part Number: APT150GT120JR
Manufacturer: Microchip Technology
IGBT Type: NPT
Input Configuration: Standard
Package: ISOTOP
Operating Temperature: -55°C to 150°C (TJ)
Maximum Power: 830 W
Maximum Collector-Emitter Breakdown Voltage: 1200 V
Maximum Collector Current: 170 A
Maximum Collector-Emitter Saturation Voltage: 3.7 V
Quality and Safety Features
RoHS3 compliant
Microchip Technology's quality and reliability standards
Compatibility
Chassis mount configuration
Application Areas
Suitable for a wide range of power conversion applications, such as motor drives, power supplies, and industrial equipment.
Product Lifecycle
The APT150GT120JR is an active product in Microchip Technology's portfolio.
Replacements and upgrades may be available in the future.
Several Key Reasons to Choose This Product
High performance and reliability for efficient power conversion
Wide operating temperature range for use in diverse environments
Robust and durable design for long-term reliability
Compliance with RoHS3 standards for environmental responsibility
Chassis mount configuration for easy integration into various systems